Twisted rhombohedral graphene is positioned as a versatile platform for high-Chern-number topological materials and exotic quantum transport, with implications for low-power electronics and multi-channel devices.

The broader study frames rhombohedral multilayer graphene as a platform to explore the interplay of strong correlations, topology, and spin-orbit coupling, with potential impacts on spintronics and quantum computing.

Dual-gate structures enable independent tuning of carrier density and displacement field, allowing precise mapping of phase behavior including insulating states.

Optimal proximity-induced SOC effects occur at misalignment angles between graphene and WSe2 around 15 to 20 degrees, with devices showing angles near 15 and 18 degrees, highlighting alignment sensitivity.

Proximity-induced spin-orbit coupling on the meV scale, together with strong correlations from surface flat bands, leads to spontaneous symmetry breaking and novel electronic states.

In twisted monolayer-trilayer graphene, states with Chern number |C| = 3 at a certain filling were demonstrated, and the sign of the Chern number can be switched via electrostatic doping or a displacement field.

There is a displacement-field-driven topological phase transition between quantum anomalous Hall states with C = 3 and C = 4 at a specific filling in twisted Bernal bilayer-rhombohedral tetralayer graphene (2+4) L.

The system shows near-zero Hall resistance and a hysteretic anomalous Hall effect, indicating broken symmetries and fully polarized charge carriers.

Residual disorder and imperfect contacts are limiting perfect quantization, with future work aimed at reaching higher Chern numbers and exploring proximity-induced superconductivity for chiral Majorana edge modes.

Raman mapping confirms preservation of rhombohedral domains after encapsulation, ensuring structural integrity for the observed phenomena.

Spin-valley locking from Ising spin-orbit coupling enables valley control via the valley Zeeman effect, influencing band overlap and inversion in valley-polarized bands.

Future directions include mapping the phase diagram across spin-orbit coupling strengths and twist angles, exploring proximate anisotropic SOC with low-symmetry 2D materials, and investigating correlated electron-hole states like excitonic insulators and viscous Dirac fluids.