A Georgia Tech team has developed ferroelectric NAND flash memory as a more radiation-resistant data storage solution for deep space missions.

Ferroelectric memory stores data via polarization within the material, making it significantly less susceptible to radiation than conventional trapped-charge flash memory.

The ferroelectric NAND stores data as polarization rather than trapped charge, enhancing its resistance to radiation compared with traditional NAND flash.

The research indicates current space radiation environments—from Low-Earth Orbit to deep space—fall within the tested tolerance range, supporting potential deployment on future missions.

The work is part of broader DARPA and DoD-supported programs and is detailed in Nano Letters (2026), highlighting the project’s official backing.

The technology comes at a time when spacecraft rely more on onboard AI, making reliable autonomous data processing and storage increasingly important.

Experts say memory reliability could be a deciding factor in mission success, influencing whether data remains intact during exploration.

Deep space missions face high radiation and long communication delays, making robust autonomous storage crucial for exploring Jupiter’s moons, outer planets, or venturing beyond the Solar System.

The approach demonstrates reliable operation in extremely harsh radiation environments, aligning with needs for space AI data processing and storage.

Ferroelectric NAND flash could become essential for ensuring data survives on missions at the edge of the Solar System.

Lance Fernandes, an ECE Ph.D. student, built the ferroelectric NAND chips in Georgia Tech’s cleanroom, with radiation testing conducted at Pennsylvania State University.

Lab-fabricated ferroelectric NAND chips were radiation-tested at Penn State and withstood up to one million rads, roughly 100 million chest X-rays, about 30 times more durable than standard flash memory.