Onsemi and Innoscience Join Forces to Accelerate GaN Adoption Across Key Industries

December 2, 2025
Onsemi and Innoscience Join Forces to Accelerate GaN Adoption Across Key Industries
  • A strategic partnership between onsemi and Innoscience aims to fuse onsemi’s system integration, packaging, and drivers with Innoscience’s GaN wafers and high-volume manufacturing to accelerate GaN adoption across industrial, automotive, telecom, consumer, and AI data-center markets.

  • The collaboration seeks to build a comprehensive GaN platform by leveraging onsemi’s broad portfolio and Innoscience’s GaN technology and scale, driving broader customer adoption.

  • By combining integrated systems and packaging expertise with Innoscience’s GaN devices, the partners aim to expand deployment across multiple sectors through scalable manufacturing.

  • Financial health highlights include trailing twelve months revenue around $6.19 billion with solid margins and a strong balance sheet, though ROIC trails the cost of capital.

  • Industry risk factors include semiconductor market volatility, indicated by a beta around 2.12, with a 2026 GaN sampling program seen as a potential catalyst.

  • The company overview notes a market cap near $20 billion and NASDAQ listing, with no current stock price provided in the article.

  • Analysts project GaN to capture about 11% of the global power semiconductor market by 2030, growing at roughly a 42% CAGR from 2024 to 2030.

  • The press release contains forward-looking statements and risk disclosures, noting the collaboration is non-binding and referring to the 2024 Form 10-K for risk factors.

  • Target applications include industrial motor drives, solar microinverters, automotive DC-DC converters, telecom DC-DC converters, consumer power supplies, and AI data-center intermediate bus converters.

  • GaN devices offer higher switching speeds, smaller form factors, and lower energy losses, addressing past cost and capacity constraints and enabling mainstream, high-volume deployment.

  • The MoU targets sampling in the first half of 2026 for 40–200V GaN devices, aiming to overcome cost and supply barriers and broaden GaN adoption across industry and data centers.

  • The collaboration envisions a GaN power device TAM of about $2.9 billion by 2030, with significant value potential for both companies as manufacturing scales globally.

Summary based on 4 sources


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